I. Introduction

II. Ohmic Contacts for High Power and High Temperature SiC Devices
1. Topical Significance of the Problem
2. Ohmic Contacts to n-type SiC
2.1. Ni Ohmic Contacts
2.2. Ni - Si Ohmic Contacts
3. Ohmic Contacts to p-type SiC
3.1. Al and Al/Si Ohmic Contacts - Electrical, Structural and Thermal Properties
3.2. Pd Ohmic Contacts - Electrical, Structural and Thermal Properties
4. Conclusion

III. Packages and Packaging for High Power and High Temperature SiC Devices
1. Significance of the Problem
2. Packages
2.1. Thermal Characteristics of the Materials
2.2. Mechanical Characteristics
2.3. Packages for High Power and High Temperature SiC MESFETs
3. Packaging
3.1. Choice of Back Side Metallization
3.2. High Temperature Gold Based Solders
3.3. Results and Discussion for High Power and High Temperature SiC MESFETs
4. Conclusion

IV. Summary

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